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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
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Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepared by deposition at cryogenic temperatures
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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
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Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
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