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Filtering by: Author Takayoshi Oshima Journal Applied Physics Express

Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate

Description/Abstract:

We demonstrated selective-area growth of r-SnO2 on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy on a window started with a Vol...

Keyword:

SnO2 and selective area growth

Resource Type:

Article

Author:

Hitoshi Takane, Takayoshi Oshima, Katsuhisa Tanaka, and Kentaro Kaneko

Journal:

Applied Physics Express

Date Uploaded:

13/04/2024
Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications

Description/Abstract:

We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...

Keyword:

GeO2, SnO2, and TiO2

Resource Type:

Article

Author:

Hitoshi Takane, Takayoshi Oshima, Takayuki Harada, Kentaro Kaneko, and Katsuhisa Tanaka

Journal:

Applied Physics Express

Date Uploaded:

30/01/2024

Date Modified:

01/02/2024
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy

Description/Abstract:

We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...

Keyword:

Ga2O3 and selective area growth

Resource Type:

Article

Author:

Takayoshi Oshima and Yuichi Oshima

Journal:

Applied Physics Express

Date Uploaded:

28/11/2023

Date Modified:

28/11/2023