Index Catalog // MDR

Description/Abstract:: We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...
Keyword:: HVPE and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

Description/Abstract:: The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...
Keyword:: ELO, HVPE, domain, ε-Ga2O3, and κ-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, and Takashi Shinohe
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

Description/Abstract:: We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...
Keyword:: ELO, HVPE, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

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