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Filtering by: Journal Applied Physics Express Keyword Ga2O3 Publisher IOP Publishing

Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate

Description/Abstract:

We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...

Keyword:

Ga2O3 and HCl gas etching

Resource Type:

Article

Author:

Takayoshi Oshima and Yuichi Oshima

Journal:

Applied Physics Express

Date Uploaded:

14/06/2024
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy

Description/Abstract:

We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...

Keyword:

Ga2O3 and selective area growth

Resource Type:

Article

Author:

Takayoshi Oshima and Yuichi Oshima

Journal:

Applied Physics Express

Date Uploaded:

28/11/2023

Date Modified:

28/11/2023