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HCl gas etching
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Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Description/Abstract:
We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...
Keyword:
Ga2O3
and
HCl gas etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
14/06/2024
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Ga2O3
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HCl gas etching
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English
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IOP Publishing
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Rights Statement Sim
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Author
Takayoshi Oshima
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Yuichi Oshima
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The Murata Science Foundation
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Applied Physics Express
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