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Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>
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Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
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Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
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Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
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Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
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Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
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