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Takayoshi Oshima
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Yuichi Oshima
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Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Description/Abstract:
We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...
Keyword:
Ga2O3
and
HCl gas etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
14/06/2024
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Description/Abstract:
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:
Ga2O3
,
HCl
, and
etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
28/05/2024
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
Description/Abstract:
We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...
Keyword:
HVPE
and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
Description/Abstract:
The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...
Keyword:
ELO
,
HVPE
,
domain
,
ε-Ga2O3
, and
κ-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
, and
Takashi Shinohe
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...
Keyword:
ELO
,
HVPE
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
Description/Abstract:
We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...
Keyword:
Ga2O3
and
selective area growth
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
28/11/2023
Date Modified:
28/11/2023
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Ga2O3
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English
6
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IOP Publishing
5
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1
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6
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6
Rights Statement Sim
In Copyright
3
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
2
Creative Commons BY Attribution 4.0 International
1
Author
Takayoshi Oshima
[remove]
6
Yuichi Oshima
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6
Katsuaki Kawara
3
Takashi Shinohe
3
Mitsuru Okigawa
2
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The Murata Science Foundation
1
Journal
Applied Physics Express
2
JAPANESE JOURNAL OF APPLIED PHYSICS
2
APPLIED PHYSICS LETTERS
1
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1