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Yuichi Oshima
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HVPE
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Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
Description/Abstract:
We demonstrate that dislocation density in α-Ga2O3 epilayers is remarkably reduced via rapid growth at low temperatures by halide vapor p...
Keyword:
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Hiroyuki Ando
, and
Takashi Shinohe
Journal:
Applied Physics Express
Date Uploaded:
22/06/2024
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>
Description/Abstract:
We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...
Keyword:
ELO
,
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Shingo Yagyu
, and
Takashi Shinohe
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
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Takashi Shinohe
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Yuichi Oshima
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Hiroyuki Ando
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Applied Physics Express
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