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Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>

Description/Abstract:

We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...

Keyword:

ELO, HVPE, dislocation, and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Shingo Yagyu, and Takashi Shinohe

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

30/01/2024

Date Modified:

01/02/2024
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Description/Abstract:

パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。

Keyword:

epitaxy, power device, and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima and Elaheh Ahmadi

Journal:

APPLIED PHYSICS LETTERS

Date Uploaded:

29/01/2024

Date Modified:

01/02/2024