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Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
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Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
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Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy
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In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
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Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
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Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
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Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction
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