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1. Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Description/Abstract:: In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:: Ga2O3, HCl, and etching
Resource Type:: Article
Author:: Takayoshi Oshima and Yuichi Oshima
Journal:: APPLIED PHYSICS LETTERS
Date Uploaded:: 28/05/2024

1. Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

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1. Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

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