Search Constraints
Search Results
Select an image to start the slideshow
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
1 of 9
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
2 of 9
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
3 of 9
Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3
4 of 9
Materials issues and devices of α- and β-Ga2O3
5 of 9
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
6 of 9
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
7 of 9
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
8 of 9
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
9 of 9