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Yuichi Oshima
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APPLIED PHYSICS LETTERS
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Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Description/Abstract:
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:
Ga2O3
,
HCl
, and
etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
28/05/2024
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
Description/Abstract:
パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。
Keyword:
epitaxy
,
power device
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
and
Elaheh Ahmadi
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
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etching
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AIP Publishing
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
1
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Author
Yuichi Oshima
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2
Elaheh Ahmadi
1
Takayoshi Oshima
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Journal
APPLIED PHYSICS LETTERS
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