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Ashutosh Kumar
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Tadakatsu Ohkubo
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Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
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gallium nitride
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scanning transmission electron microscopy
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activation
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atom probe tomography
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cathodoluminescence
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English
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AIP Publishing
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Creative Commons BY Attribution 4.0 International
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Ashutosh Kumar
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Jun Uzuhashi
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Tadakatsu Ohkubo
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Hideki Sakurai
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JOURNAL OF APPLIED PHYSICS
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