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In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

Description/Abstract:

The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...

Keyword:

ELO, HVPE, domain, ε-Ga2O3, and κ-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, and Takashi Shinohe

Journal:

JAPANESE JOURNAL OF APPLIED PHYSICS

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:

We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...

Keyword:

ELO, HVPE, and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe

Journal:

JAPANESE JOURNAL OF APPLIED PHYSICS

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

Description/Abstract:

β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...

Keyword:

Ga2O3 and lithography

Resource Type:

Article

Author:

Takayoshi Oshima

Journal:

JAPANESE JOURNAL OF APPLIED PHYSICS

Date Uploaded:

17/01/2024

Date Modified:

24/01/2024