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Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Description/Abstract:

In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...

Keyword:

Ga2O3, HCl, and etching

Resource Type:

Article

Author:

Takayoshi Oshima and Yuichi Oshima

Journal:

APPLIED PHYSICS LETTERS

Date Uploaded:

28/05/2024