Skip to Content
Toggle navigation
Home
About
Help
Contact
Login
Search MDR
Go
Search Constraints
Start Over
Filtering by:
Author
Takayoshi Oshima
Remove constraint Author: Takayoshi Oshima
Author
Yuichi Oshima
Remove constraint Author: Yuichi Oshima
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Remove constraint Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1
entry found
Sort by relevance
relevance
date uploaded ▼
date uploaded ▲
date modified ▼
date modified ▲
Number of results to display per page
10 per page
10
per page
20
per page
50
per page
100
per page
View results as:
List
Gallery
Masonry
Slideshow
Search Results
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
Description/Abstract:
We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...
Keyword:
HVPE
and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Toggle facets
Limit your search
Type of work
Publication
1
Keyword
HVPE
1
α-Ga2O3
1
Language
English
1
Publisher
IOP Publishing
1
Resource type
Article
1
Visibility
open
1
Rights Statement Sim
In Copyright
1
Author
Katsuaki Kawara
1
Mitsuru Okigawa
1
Takashi Shinohe
1
Takayoshi Oshima
[remove]
1
Yuichi Oshima
[remove]
1
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
[remove]
1