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Filtering by: Funder Samsung Electronics Co, Ltd. Remove constraint Funder: Samsung Electronics Co, Ltd.

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Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

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Type of work

Publication1

Keyword

IGZO1
contact resistance1
hydrogen1
oxide semiconductors1
palladium1
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Language

English1

Publisher

American Chemical Society (ACS)1

Resource type

Article1

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open1

Rights Statement Sim

Creative Commons BY Attribution 4.0 International1

Author

Hanjun Cho1
Hideo Hosono1
Junghwan Kim1
Masatake Tsuji1
Shigenori Ueda1
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Funder

Ministry of Education, Culture, Sports, Science and Technology1
Samsung Electronics Co, Ltd.[remove]1

Journal

ACS Nano1

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