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Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
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Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
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Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate
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Interpretation of time-dependent current and resistance of HTS closed loop with superconducting joint considering flux creep
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Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications
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Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
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Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
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