We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...

We demonstrated selective-area growth of r-SnO2 on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy on a window started with a Vol...

We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...

We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...