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Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
We demonstrated epitaxial lateral overgrowth of a-Ga2O3 by halide vapor phase epitaxy. We formed stripe patterned or triangular lattice d...
Keyword:
ELO
,
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Y. Oshima
,
K. Kawara
,
T. Shinohe
,
T. Hitora
,
M. Kasu
, and
S. Fujita
Journal:
APL MATERIALS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
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ELO
1
HVPE
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dislocation
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α-Ga2O3
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English
1
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AIP Publishing
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Creative Commons BY Attribution 4.0 International
1
Author
K. Kawara
1
M. Kasu
1
S. Fujita
1
T. Hitora
1
T. Shinohe
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APL MATERIALS
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