Search Constraints
« Previous |
1 - 10 of 11
|
Next »
Search Results
Select an image to start the slideshow
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
1 of 10
Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals
2 of 10
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>
3 of 10
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
4 of 10
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
5 of 10
Materials issues and devices of α- and β-Ga2O3
6 of 10
Improvement of magnetic field detectivity in electrical 1/f noise-dominated tunnel magnetoresistive sensors by AC magnetic field modulation technique
7 of 10
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
8 of 10
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
9 of 10
Sorption-induced static mode nanomechanical sensing with viscoelastic receptor layers for multistep injection-purge cycles
10 of 10