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Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals
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Optimum asymmetry for nanofabricated refractometric sensors at quasi-bound states in the continuum
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Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
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Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
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Perspective on nanoscale magnetic sensors using giant anomalous Hall effect in topological magnetic materials for read head application in magnetic recording
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Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>
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Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
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Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
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Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
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Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
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