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Filtering by: Author Yuichi Oshima Journal APPLIED PHYSICS LETTERS Publisher AIP Publishing

Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Description/Abstract:

In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...

Keyword:

Ga2O3, HCl, and etching

Resource Type:

Article

Author:

Takayoshi Oshima and Yuichi Oshima

Journal:

APPLIED PHYSICS LETTERS

Date Uploaded:

28/05/2024
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Description/Abstract:

パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。

Keyword:

epitaxy, power device, and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima and Elaheh Ahmadi

Journal:

APPLIED PHYSICS LETTERS

Date Uploaded:

29/01/2024

Date Modified:

01/02/2024