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Filtering by: Author Hiroki Kurita Journal Micromachines Publisher MDPI AG Rights Statement Sim Creative Commons BY Attribution 4.0 International

Description/Abstract:: Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of...
Keyword:: thermal boundary resistance, Gallium Nitride, semiconductor, high-electron-mobility transistors
Resource Type:: Article
Author:: Tianzhuo Zhan, Mao Xu, Zhi Cao, Chong Zheng, Hiroki Kurita, Fumio Narita, Yen-Ju Wu, Yibin Xu, Haidong Wang, Mengjie Song, Wei Wang, Yanguang Zhou, Xuqing Liu, Yu Shi, Yu Jia, Sujun Guan, Tatsuro Hanajiri, Toru Maekawa, Akitoshi Okino, and Takanobu Watanabe
Journal:: Micromachines
Date Uploaded:: 13/11/2023

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