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Crucial role of interfacial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>s</mml:mi><mml:mtext>−</mml:mtext><mml:mi>d</mml:mi></mml:mrow></mml:math> exchange interaction in the temperature dependence of tunnel magnetoresistance
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Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions
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First-principles study on magnetic tunneling junctions with semiconducting CuInSe2and CuGaSe2barriers
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Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions
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Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study
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Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> barriers
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Theoretical Study on Magnetic Tunneling Junctions with Semiconductor Barriers CuInSe<sub>2</sub> and CuGaSe<sub>2</sub> Including a Detailed Analysis of Band-Resolved Transmittances
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