Search Constraints
« Previous |
1 - 10 of 13
|
Next »
Search Results
Select an image to start the slideshow
Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
1 of 10
Critical current improvement and resistance evaluation of superconducting joint between Bi2223 tapes
2 of 10
Review of the temporal stability of the magnetic field for ultra-high field superconducting magnets with a particular focus on superconducting joints between HTS conductors
3 of 10
Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM
4 of 10
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
5 of 10
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
6 of 10
Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy
7 of 10
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
8 of 10
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
9 of 10
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
10 of 10