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Filtering by: Author Kiyoshi Shimamura Remove constraint Author: Kiyoshi Shimamura Journal JOURNAL OF APPLIED PHYSICS Remove constraint Journal: JOURNAL OF APPLIED PHYSICS Keyword κ-Ga2O3 Remove constraint Keyword: κ-Ga2O3 Rights Statement Sim In Copyright Remove constraint Rights Statement Sim: In Copyright

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Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

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Type of work

Publication1

Keyword

HVPE1
ε-Ga2O31
κ-Ga2O3[remove]1

Language

English1

Publisher

AIP Publishing1

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Article1

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open1

Rights Statement Sim

In Copyright[remove]1

Author

Encarnación G. Víllora1
Kiyoshi Shimamura[remove]1
Satoshi Yamamoto1
Yoshitaka Matsushita1
Yuichi Oshima1

Journal

JOURNAL OF APPLIED PHYSICS[remove]1

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