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Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching

Description/Abstract:

Threading dislocations in a heteroepitaxial α-Ga2O3 film was visualized as etch pits on the surface. We found that etch pits were formed ...

Keyword:

dislocation, etching, and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Shingo Yagyu, and Takashi Shinohe

Journal:

JOURNAL OF CRYSTAL GROWTH

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024