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Takayoshi Oshima
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Yuichi Oshima
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Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precur...
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
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Ga2O3
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HVPE
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ELO
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α-Ga2O3
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HCl
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English
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IOP Publishing
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Author
Takayoshi Oshima
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Yuichi Oshima
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Katsuaki Kawara
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Takashi Shinohe
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Mitsuru Okigawa
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The Murata Science Foundation
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Applied Physics Express
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JAPANESE JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS LETTERS
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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