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GaAs(110)
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Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM
Description/Abstract:
The electrostatic potential distribution in materials and devices plays an important role in controlling the behaviors of charge carriers...
Keyword:
GaAs(110)
,
Kelvin probe force microscopy
,
p-n junction
, and
qPlus sensor
Resource Type:
Article
Author:
Nobuyuki Ishida
and
Takaaki Mano
Journal:
Nanotechnology
Date Uploaded:
03/04/2024
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Keyword
GaAs(110)
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Kelvin probe force microscopy
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p-n junction
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qPlus sensor
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English
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IOP Publishing
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Author
Nobuyuki Ishida
1
Takaaki Mano
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Japan Society for the Promotion of Science
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Nanotechnology
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