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Filtering by: Author Tadakatsu Ohkubo Journal JOURNAL OF APPLIED PHYSICS Keyword scanning transmission electron microscopy

Description/Abstract:: Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...
Keyword:: activation, gallium nitride, scanning transmission electron microscopy, and semiconductor
Resource Type:: Article
Author:: Ashutosh Kumar, Martin Berg, Qin Wang, Jun Uzuhashi, Tadakatsu Ohkubo, Michael Salter, and Peter Ramvall
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 28/09/2023
Date Modified:: 28/09/2023

Description/Abstract:: An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:: atom probe tomography, cathodoluminescence, gallium nitride, implantation, and scanning transmission electron microscopy
Resource Type:: Article
Author:: Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 04/07/2023

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