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Takayoshi Oshima
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Creative Commons BY Attribution 4.0 International
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Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Description/Abstract:
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:
Ga2O3
,
HCl
, and
etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
28/05/2024
Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications
Description/Abstract:
We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...
Keyword:
GeO2
,
SnO2
, and
TiO2
Resource Type:
Article
Author:
Hitoshi Takane
,
Takayoshi Oshima
,
Takayuki Harada
,
Kentaro Kaneko
, and
Katsuhisa Tanaka
Journal:
Applied Physics Express
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
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Takayoshi Oshima
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日本板硝子材料工学助成会
1
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APPLIED PHYSICS LETTERS
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Applied Physics Express
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