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Filtering by: Journal Applied Physics Express Funder The Murata Science Foundation Keyword Ga2O3

Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate

Description/Abstract:

We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...

Keyword:

Ga2O3 and HCl gas etching

Resource Type:

Article

Author:

Takayoshi Oshima and Yuichi Oshima

Journal:

Applied Physics Express

Date Uploaded:

14/06/2024