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Filtering by: Author Takayoshi Oshima Remove constraint Author: Takayoshi Oshima Rights Statement Sim In Copyright Remove constraint Rights Statement Sim: In Copyright

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Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

Description/Abstract:

We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...

Keyword:

HVPE and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe

Journal:

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

Description/Abstract:

The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...

Keyword:

ELO, HVPE, domain, ε-Ga2O3, and κ-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, and Takashi Shinohe

Journal:

JAPANESE JOURNAL OF APPLIED PHYSICS

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:

We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...

Keyword:

ELO, HVPE, and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe

Journal:

JAPANESE JOURNAL OF APPLIED PHYSICS

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

Description/Abstract:

β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...

Keyword:

Ga2O3 and lithography

Resource Type:

Article

Author:

Takayoshi Oshima

Journal:

JAPANESE JOURNAL OF APPLIED PHYSICS

Date Uploaded:

17/01/2024

Date Modified:

24/01/2024

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Publication4

Keyword

HVPE3
ELO2
α-Ga2O32
Ga2O31
domain1
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English4

Publisher

IOP Publishing4

Resource type

Article4

Visibility

open4

Rights Statement Sim

In Copyright[remove]4

Author

Takayoshi Oshima[remove]4
Katsuaki Kawara3
Takashi Shinohe3
Yuichi Oshima3
Mitsuru Okigawa2

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS3
SEMICONDUCTOR SCIENCE AND TECHNOLOGY1

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