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Filtering by: Author Akira Uedono Author Tetsu Kachi Journal JOURNAL OF APPLIED PHYSICS

Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Description/Abstract:

For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...

Keyword:

GaN

Resource Type:

Article

Author:

Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, and Yasuo Koide

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

09/05/2024
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Description/Abstract:

We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...

Keyword:

atom probe tomography, gallium nitride, and transmission electron microscopy

Resource Type:

Article

Author:

Emi Kano, Keita Kataoka, Jun Uzuhashi, Kenta Chokawa, Hideki Sakurai, Akira Uedono, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Yuta Itoh, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

28/09/2023

Date Modified:

28/09/2023

Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

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