Search Constraints
« Previous |
371 - 380 of 1,939
|
Next »
Search Results
Select an image to start the slideshow
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
1 of 10
Ranking Pareto optimal solutions based on projection free energy
2 of 10
Large Tunneling Magnetoresistance in Perpendicularly Magnetized Magnetic Tunnel Junctions Using Co75Mn25/Mo/Co20Fe60B20 Multilayers
3 of 10
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
4 of 10
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
5 of 10
Narrow-band phosphor K2ZnP2O7:Eu2+ discovered using local structure similarity
6 of 10
Sample structure prediction from measured XPS data using Bayesian estimation and SESSA simulator
7 of 10
表面電子分光法における信号の減衰は如何に記述されるか? V. 誘電関数を用いた固体における電子の非弾性散乱断面積
8 of 10
Artificial intelligence inspired design of non-isothermal aging for γ–γ′ two-phase, Ni–Al alloys
9 of 10
Implementation strategies in phonopy and phono3py
10 of 10