Transition of topological Hall effect for tetragonal Heusler Mn<sub>2</sub>PtSn thin film

Satoshi Sugimoto; Yukiko Takahashi; Shinya Kasai

doi:10.35848/1882-0786/ac223f

論文 Transition of topological Hall effect for tetragonal Heusler Mn₂PtSn thin film

Satoshi Sugimoto (National Institute for Materials Science) ; Yukiko Takahashi (National Institute for Materials Science) ; Shinya Kasai (National Institute for Materials Science)

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引用

Satoshi Sugimoto, Yukiko Takahashi, Shinya Kasai. Transition of topological Hall effect for tetragonal Heusler Mn₂PtSn thin film. Applied Physics Express. 2021, 14 (10), 103003. https://doi.org/10.35848/1882-0786/ac223f

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(abstract)

A large topological Hall effect was observed in Mn2PtSn epitaxial thin films. The non-hysteretic topological Hall resistivity can be attributed to the canted spins below the reorientation temperature, while the hysteretic topological resistivity in the vicinity of the zero field captures the trend of antiskyrmion formation. A decrease in thickness enhances the contribution of dipolar interactions, leading to an additional antiskyrmion-type signal above the reorientation temperature. The amplitudes of these topological signals are strongly modulated by the film thickness, providing pathways for developing antiskyrmion-hosting media via film engineering.

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