説明:
(abstract)In this work, we investigated the effect of ultra-high vacuum annealing and hydrogen (H2) plasma treatment on the resonance properties of SCD MEMS cantilevers. The resonance frequency and Q factors were measured and analyzed after annealing from 900 to 1100℃ followed by H2 plasma treatment. Despite the annealing and plasma treatment, the resonance frequency of the SCD cantilevers well follows the inverse power law relationship with the length of different SCD MEMS cantilevers, revealing the excellent reliability of SCD MEMS, as shown in Fig.1 (a). It was found that the Q factors were markedly improved from the typical value around 8,000 to over 15,000 after the annealing treatment at 1100℃ for 7 hours (Fig.1(b)).
権利情報:
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会議:
2023年第70回応用物理学会春季学術講演会
(2023-03-15 - 2023-03-18)
研究助成金:
原稿種別: 論文以外のデータ
MDR DOI: https://doi.org/10.48505/nims.8654
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更新時刻: 2026-10-13 16:46:48 +0900
MDRでの公開時刻: 2026-10-13 18:28:36 +0900
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講演予稿集 16p-A408-1.pdf
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サイズ | 372KB | 詳細 |