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An Fe4N(110) single-crystal film of 50 nm thickness with γʹ phase is prepared through hetero-epitaxial growth on an MgO(110) single-crystal substrate at 400 ◦C by reactive sputtering. The out-of-plane and in-plane lattice constants agree with those of bulk within small differences less than 0.2% and the orientation dispersions are about 1.2◦. The degree of N site ordering in Fe4N structure is estimated to be 0.995. The arithmetical mean surface roughness is as small as 0.3 nm. These data show that a high-quality Fe4N single-crystal film is successfully formed. The Fe4N film shows in-plane magnetic anisotropy with the easy magnetization direction parallel to [001] and with the hard direction parallel to [1-11], which is reflecting the positive magnetocrystalline anisotropy, K_1. A large negative λ_100 value of –40 ×10^–6 and a fairly-large positive λ_111 value of +150 ×10^–6 are observed. The present study has shown that γʹ-Fe4N compound is one of the strong candidates for rare-metal-free magnetostrictive materials.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: Fe4N compound, Large magnetostriction, Single-crystal thin film, γ' phase

刊行年月日: 2023-06-30

出版者: Elsevier BV

掲載誌:

• Journal of Magnetism and Magnetic Materials (ISSN: 03048853) vol. 585 170942

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5064

公開URL: https://doi.org/10.1016/j.jmmm.2023.170942

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更新時刻: 2025-06-30 08:30:27 +0900

MDRでの公開時刻: 2025-06-30 08:18:02 +0900