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説明:

We combined synchrotron radiation nanobeam X-ray diffraction technique with the pump-probe method to perform in-situ measurements of local strain in a normally-ON AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor device under transistor operation. The c-axis strain in the AlGaN barrier layer within the gate region exhibited a clear position dependence, increasing as the gate voltage was increased in the negative direction and as the measurement position moved from the center of the gate electrode towards the drain-side gate edge. Based on the characteristics of the measured c-axis and a-axis strains, we successfully extracted not only the strain component due to the inverse piezoelectric effect but also the thermal expansion strain component, using the constitutive equation for elastic bodies.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

  Copyright 2025 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.

キーワード: GaN, HEMT, Strain, In situ

刊行年月日: 2025-08-21

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 138 issue. 7 075701

研究助成金:

• Japan Society for the Promotion of Science JP16H06421
• Japan Society for the Promotion of Science JP22KK0055
• Japan Society for the Promotion of Science JP23H01447
• Japan Society for the Promotion of Science JP23H05457
• Murata Science and Education Foundation
• Japan Society for the Promotion of Science JP16H06423

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5662

公開URL: https://doi.org/10.1063/5.0275921

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更新時刻: 2025-08-23 08:30:23 +0900

MDRでの公開時刻: 2025-08-23 08:17:05 +0900