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Oxygen is a ubiquitous contaminant in thin films grown in high vacuum systems, and it plays an important role in the properties of the p-type conductivity of transparent copper(I) iodide (CuI). We study the ambi-ent properties of copper iodide deposited at various partial pressures of oxygen gas. Through a variety of experimental techniques we find that achieving a critical oxygen partial pressure of below 3 × 10−5 mbar is essential for growing stoichiometric and conductive CuI thin films. Notably, we relate the commonly reported copper excess to the presence of oxygen within the CuI films. We study how the presence of oxygen affects the optical and structural properties of CuI. Finally, we infer from transport measurements that oxygen is not a shallow acceptor within CuI, as depositing it anywhere below the critical oxygen partial pressure results in no measurable dependency on the Hall carrier concentration.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: thermoelectric

刊行年月日: 2024-11-28

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 136 issue. 20 205702

研究助成金:

• Marsden Fund MFP-GNS2301
• JST-Mirai Program JPMJMI19A1

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0235467

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更新時刻: 2024-12-09 16:30:46 +0900

MDRでの公開時刻: 2024-12-09 16:30:46 +0900