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Description:

Oxygen is a ubiquitous contaminant in thin films grown in high vacuum systems, and it plays an important role in the properties of the p-type conductivity of transparent copper(I) iodide (CuI). We study the ambi-ent properties of copper iodide deposited at various partial pressures of oxygen gas. Through a variety of experimental techniques we find that achieving a critical oxygen partial pressure of below 3 × 10−5 mbar is essential for growing stoichiometric and conductive CuI thin films. Notably, we relate the commonly reported copper excess to the presence of oxygen within the CuI films. We study how the presence of oxygen affects the optical and structural properties of CuI. Finally, we infer from transport measurements that oxygen is not a shallow acceptor within CuI, as depositing it anywhere below the critical oxygen partial pressure results in no measurable dependency on the Hall carrier concentration.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: thermoelectric

Date published: 2024-11-28

Publisher: AIP Publishing

Journal:

• Journal of Applied Physics (ISSN: 00218979) vol. 136 issue. 20 205702

Funding:

• Marsden Fund MFP-GNS2301
• JST-Mirai Program JPMJMI19A1

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/5.0235467

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Updated at: 2024-12-09 16:30:46 +0900

Published on MDR: 2024-12-09 16:30:46 +0900