Takehiro SHIMAOKA
(AIST)
;
Hitoshi Umezawa
(AIST)
;
Gwénolé JACOPIN
(CNRS, Institut Néel)
;
Satoshi KOIZUMI
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
)
;
Takeshi Fujiwara
(AIST)
;
JULIEN PERNOT
(CNRS, Institut Néel)
コレクション
引用
説明:
(abstract)Temperature dependence of the energy conversion efficiency of diamond pn junction betavoltaic cells was evaluated. The diamond pn junction diode exhibits energy conversion efficiencies of 18-24% at 150-300 K, which is more than twice as high as those of silicon PiN diode. Above 150K, the diamond pn junction diode presents smaller temperature dependency on energy conversion efficiency than that of silicon diode, which would make diamond pn junction betavoltaic cells, a promising device for energy harvesting in remote sensing devices over a wide temperature range except in the cryogenic region.
権利情報:
-
In Copyright
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キーワード: ultrawide bandgap, energy conversion, nuclear battery, betavoltaic cell, remote sensing
刊行年月日: 2023-11-16
出版者: IEEE
掲載誌:
- IEEE ELECTRON DEVICE LETTERS vol. 45 issue. 1 p. 96-99
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4404
公開URL: https://ieeexplore.ieee.org/abstract/document/10320390
関連資料:
その他の識別子:
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更新時刻: 2025-11-17 12:30:15 +0900
MDRでの公開時刻: 2025-11-16 08:22:44 +0900
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Temperature dependence of betavoltaic cell performance of diamond pn junction diode_draft.pdf
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サイズ | 536KB | 詳細 |