Article Temperature dependence of betavoltaic cell performance of diamond pn junction diode

Takehiro SHIMAOKA SAMURAI ORCID (AIST) ; Hitoshi Umezawa ORCID (AIST) ; Gwénolé JACOPIN ORCID (CNRS, Institut Néel) ; Satoshi KOIZUMI SAMURAI ORCID (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials ScienceROR) ; Takeshi Fujiwara ORCID (AIST) ; JULIEN PERNOT ORCID (CNRS, Institut Néel)

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Takehiro SHIMAOKA, Hitoshi Umezawa, Gwénolé JACOPIN, Satoshi KOIZUMI, Takeshi Fujiwara, JULIEN PERNOT. Temperature dependence of betavoltaic cell performance of diamond pn junction diode. IEEE ELECTRON DEVICE LETTERS. 2023, 45 (1), 96-99. https://doi.org/10.48505/nims.4404
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(abstract)

Temperature dependence of the energy conversion efficiency of diamond pn junction betavoltaic cells was evaluated. The diamond pn junction diode exhibits energy conversion efficiencies of 18-24% at 150-300 K, which is more than twice as high as those of silicon PiN diode. Above 150K, the diamond pn junction diode presents smaller temperature dependency on energy conversion efficiency than that of silicon diode, which would make diamond pn junction betavoltaic cells, a promising device for energy harvesting in remote sensing devices over a wide temperature range except in the cryogenic region.

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Keyword: ultrawide bandgap, energy conversion, nuclear battery, betavoltaic cell, remote sensing

Date published: 2023-11-16

Publisher: IEEE

Journal:

  • IEEE ELECTRON DEVICE LETTERS vol. 45 issue. 1 p. 96-99

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Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4404

First published URL: https://ieeexplore.ieee.org/abstract/document/10320390

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Updated at: 2025-11-17 12:30:15 +0900

Published on MDR: 2025-11-16 08:22:44 +0900

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