Gerson Mette
(Philipps University of Marburg)
;
Kunie Ishioka
(Research Center for Energy and Environmental Materials (GREEN)/Battery and Cell Materials Field/Battery Materials Analysis Group, National Institute for Materials Science)
;
Steven Youngkin
(Philipps University of Marburg)
;
Wolfgang Stolz
(Philipps University of Marburg)
;
Kerstin Volz
(Philipps University of Marburg)
;
Ulrich Hoefer
(Philipps University of Marburg)
説明:
(abstract)Ultrafast charge-carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at a pump-photon energy of 1.4 eV, which is assigned to an optical transition between electronic states at the interface. In addition, the transient re- flectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed reso- nant behavior of the oscillation, in combination with the characteristic wavelength-dependencies of its frequency and its initial phase, strongly indicates that the 2-THz mode is a difference-combination mode between a GaP-like and a Si-like phonon at the heteroint- erface and that the corresponding second-order Raman scattering process can be enhanced by a double resonance involving the inter- facial electronic states.
権利情報:
キーワード: interface phonon, semiconductor heterointerface
刊行年月日: 2025-02-09
出版者: Wiley-Blackwell
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1002/admi.202400573
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-12 12:30:18 +0900
MDRでの公開時刻: 2025-02-12 12:30:19 +0900
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Adv Materials Inter - 2025 - Mette - Interface‐Specific Excitation of Coherent Phonons at the Buried GaP Si 001 .pdf
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サイズ | 1.84MB | 詳細 |