Article Interface-specific excitation of coherent phonons at the buried GaP/Si(001) heterointerface

Gerson Mette (Philipps University of Marburg) ; Kunie Ishioka SAMURAI ORCID (Research Center for Energy and Environmental Materials (GREEN)/Battery and Cell Materials Field/Battery Materials Analysis Group, National Institute for Materials Science) ; Steven Youngkin (Philipps University of Marburg) ; Wolfgang Stolz (Philipps University of Marburg) ; Kerstin Volz (Philipps University of Marburg) ; Ulrich Hoefer (Philipps University of Marburg)

Adv Materials Inter - 2025 - Mette - Interface‐Specific Excitation of Coherent Phonons at the Buried GaP Si 001 .pdf
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Gerson Mette, Kunie Ishioka, Steven Youngkin, Wolfgang Stolz, Kerstin Volz, Ulrich Hoefer. Interface-specific excitation of coherent phonons at the buried GaP/Si(001) heterointerface. Advanced Materials Interfaces. 2025, (), 2400573. https://doi.org/10.1002/admi.202400573

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(abstract)

Ultrafast charge-carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at a pump-photon energy of 1.4 eV, which is assigned to an optical transition between electronic states at the interface. In addition, the transient re- flectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed reso- nant behavior of the oscillation, in combination with the characteristic wavelength-dependencies of its frequency and its initial phase, strongly indicates that the 2-THz mode is a difference-combination mode between a GaP-like and a Si-like phonon at the heteroint- erface and that the corresponding second-order Raman scattering process can be enhanced by a double resonance involving the inter- facial electronic states.

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Keyword: interface phonon, semiconductor heterointerface

Date published: 2025-02-09

Publisher: Wiley-Blackwell

Journal:

  • Advanced Materials Interfaces (ISSN: 21967350) 2400573

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1002/admi.202400573

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Updated at: 2025-02-12 12:30:18 +0900

Published on MDR: 2025-02-12 12:30:19 +0900

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