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説明:

Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. This isotropic magnetoresistance originates from the combined effects of a near‐zero spin–orbit coupling of Gd³⁺‐based half‐filling f‐electron system and the strong on‐site f–d exchange coupling in Gd atoms. These results not only provide a novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet‐based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities.

権利情報:

• Creative Commons BY-NC Attribution-NonCommercial 4.0 International
  

キーワード: Insulator-to-Metal Transition, Layered GdPS

刊行年月日: 2024-10-11

出版者: Wiley

掲載誌:

• Advanced Materials (ISSN: 15214095) vol. 36 issue. 48 2410655

研究助成金:

• U.S. Department of Energy
• Office of Science DE‐SC0022006;DE‐FG‐02‐05ER46200
• University of North Texas
• National Science Foundation DMR‐1906383;OSI‐2328822
• State of Florida
• Agency for Science, Technology and Research M23M6c0100
• Gordon and Betty Moore Foundation GBMF4547
• Gordon and Betty Moore Foundation GBMF9461
• Hitachi Global Foundation
• National Institute for Materials Science JP21K14656
• National Research Foundation Singapore NRF‐NRFF13‐2021‐0010
• Ministry of Education - Singapore MOE‐T2EP50222‐0014

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5108

公開URL: https://doi.org/10.1002/adma.202410655

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更新時刻: 2024-12-06 17:18:33 +0900

MDRでの公開時刻: 2024-12-06 17:18:33 +0900