Article Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

Gokul Acharya ; Bimal Neupane ; Chia‐Hsiu Hsu ; Xian P. Yang ; David Graf ; Eun Sang Choi ; Krishna Pandey ; Md Rafique Un Nabi ; Santosh Karki Chhetri ; Rabindra Basnet ; Sumaya Rahman ; Jian Wang ; Zhengxin Hu ; Bo Da SAMURAI ORCID (National Institute for Materials Science) ; Hugh O. H Churchill ; Guoqing Chang ; M. Zahid Hasan ; Yuanxi Wang ; Jin Hu

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Gokul Acharya, Bimal Neupane, Chia‐Hsiu Hsu, Xian P. Yang, David Graf, Eun Sang Choi, Krishna Pandey, Md Rafique Un Nabi, Santosh Karki Chhetri, Rabindra Basnet, Sumaya Rahman, Jian Wang, Zhengxin Hu, Bo Da, Hugh O. H Churchill, Guoqing Chang, M. Zahid Hasan, Yuanxi Wang, Jin Hu. Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors. Advanced Materials. 2024, 36 (48), 2410655. https://doi.org/10.1002/adma.202410655
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(abstract)

Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. This isotropic magnetoresistance originates from the combined effects of a near‐zero spin–orbit coupling of Gd³⁺‐based half‐filling f‐electron system and the strong on‐site f–d exchange coupling in Gd atoms. These results not only provide a novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet‐based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities.

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Keyword: Insulator-to-Metal Transition, Layered GdPS

Date published: 2024-10-11

Publisher: Wiley

Journal:

  • Advanced Materials (ISSN: 15214095) vol. 36 issue. 48 2410655

Funding:

  • U.S. Department of Energy
  • Office of Science DE‐SC0022006;DE‐FG‐02‐05ER46200
  • University of North Texas
  • National Science Foundation DMR‐1906383;OSI‐2328822
  • State of Florida
  • Agency for Science, Technology and Research M23M6c0100
  • Gordon and Betty Moore Foundation GBMF4547
  • Gordon and Betty Moore Foundation GBMF9461
  • Hitachi Global Foundation
  • National Institute for Materials Science JP21K14656
  • National Research Foundation Singapore NRF‐NRFF13‐2021‐0010
  • Ministry of Education - Singapore MOE‐T2EP50222‐0014

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5108

First published URL: https://doi.org/10.1002/adma.202410655

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Updated at: 2024-12-06 17:18:33 +0900

Published on MDR: 2024-12-06 17:18:33 +0900

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