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(abstract)Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. This isotropic magnetoresistance originates from the combined effects of a near‐zero spin–orbit coupling of Gd³⁺‐based half‐filling f‐electron system and the strong on‐site f–d exchange coupling in Gd atoms. These results not only provide a novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet‐based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities.
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Keyword: Insulator-to-Metal Transition, Layered GdPS
Date published: 2024-10-11
Publisher: Wiley
Journal:
- Advanced Materials (ISSN: 15214095) vol. 36 issue. 48 2410655
Funding:
- U.S. Department of Energy
- Office of Science DE‐SC0022006;DE‐FG‐02‐05ER46200
- University of North Texas
- National Science Foundation DMR‐1906383;OSI‐2328822
- State of Florida
- Agency for Science, Technology and Research M23M6c0100
- Gordon and Betty Moore Foundation GBMF4547
- Gordon and Betty Moore Foundation GBMF9461
- Hitachi Global Foundation
- National Institute for Materials Science JP21K14656
- National Research Foundation Singapore NRF‐NRFF13‐2021‐0010
- Ministry of Education - Singapore MOE‐T2EP50222‐0014
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5108
First published URL: https://doi.org/10.1002/adma.202410655
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Updated at: 2024-12-06 17:18:33 +0900
Published on MDR: 2024-12-06 17:18:33 +0900
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