Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

論文

著者

Akira Uedono ; Hideki Sakurai ; Jun Uzuhashi ; Tetsuo Narita ; Kacper Sierakowski ; Shoji Ishibashi ; Shigefusa F. Chichibu ; Michal Bockowski ; Jun Suda ; Tadakatsu Ohokubo ; Nobuyuki Ikarashi ; Kazuhiro Hono ; Tetsu Kachi

キーワード

gallium nitride, vacancy, positron

刊行年月日

2023-03-15

更新時刻

2024-01-05 22:12:35 +0900